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http://nbn-resolving.de/urn:nbn:de:hebis:34-2014103046235

Titel: Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs
Autor(en): Römer, FriedhardWitzigmann, Bernd
Klassifikation (DDC): 620 - Ingenieurwissenschaften (Engineering and allied operations)
Erscheinungsdatum: 2014
Zitierform: In: Optics express. - Washington, DC : Optical Society of America, 2014, Vol. 22, No. S6, pp. A1440-A1452
Zusammenfassung: We investigate the effect of the epitaxial structure and the acceptor doping profile on the efficiency droop in InGaN/GaN LEDs by the physics based simulation of experimental internal quantum efficiency (IQE) characteristics. The device geometry is an integral part of our simulation approach. We demonstrate that even for single quantum well LEDs the droop depends critically on the acceptor doping profile. The Auger recombination was found to increase stronger than with the third power of the carrier density and has been found to dominate the droop in the roll over zone of the IQE. The fitted Auger coefficients are in the range of the values predicted by atomistic simulations.
URI: urn:nbn:de:hebis:34-2014103046235
zus. URI: doi:10.1364/OE.22.0A1440OA-GEF
ISSN: 1094-4087
Bemerkungen: © 2014 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
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