Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates

dc.date.accessioned	2013-10-30T12:52:53Z
dc.date.available	2013-10-30T12:52:53Z
dc.date.issued	2013
dc.identifier.issn	1077-3118
dc.identifier.other	zdb:ZDB-1-AIPK
dc.identifier.uri	urn:nbn:de:hebis:34-2013103044340
dc.identifier.uri	http://hdl.handle.net/123456789/2013103044340
dc.language.iso	eng
dc.rights	Urheberrechtlich geschützt
dc.rights.uri	https://rightsstatements.org/page/InC/1.0/
dc.subject.ddc	530
dc.title	Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates	eng
dc.type	Aufsatz
dcterms.accessRights	open access
dcterms.bibliographicCitation	In: Applied physics letters. - Melville, NY : American Inst. of Physics, 2013, Vol. 102, 132101, 1-4
dcterms.creator	Benyoucef, M.
dcterms.creator	Usman, M.
dcterms.creator	Reithmaier, J. P.
dc.description.everything	Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich. - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.	ger
dc.relation.doi	doi:10.1063/1.4799149